Innovative Silicon, Inc. (ISi) was founded in 2002 to develop and license the Z-RAM® ultra-dense memory technology. Z-RAM® is a new concept in memory technology: unlike conventional SRAM, which uses 6 transistors, or DRAM, which uses 1 transistor and a complicated capacitor, Z-RAM® uses a single transistor – and nothing else – as the memory bitcell. The density and simplicity of this technology makes Z-RAM® the lowest-cost memory technology – both as stand-alone memory and as embedded memory on microprocessors and other leading-edge semiconductors.
Z-RAM® and ISi have received significant industry acclaim.
Z-RAM® was the overall winner of IEEE Spectrum’s 2007 “Technology Most Likely to Succeed” award; while ISi has been a perennial member of EE Times “Hot 60” List, and was recognized as a Red Herring “Hot 100” company.
ISi has attracted a world-class team of executives and technologists, and has raised nearly $50 million in venture capital funding.
| History
2008
» ISi grows to 100 employees w/w
» ISi a Finalist for both EDN's
Innovation and Swiss Economic
Forum Awards
2007
» Closed C round of financing
» Hynix procures a full
technology license to
Z-RAM® technology
» ISi joins Cadence
OpenChoice IP Program
» 21st Patent awarded
» Z-RAM® and ISi win
prestigious awards:
EETimes Silicon 60,
IEEE Spectrum
‘#1 Emerging Technology’,
Red Herring ‘Hot 100’,
EETimes Innovator of the
Year finalist
2006
» AMD procures a full
technology license to
Z-RAM® technology
» Z-RAM® Gen2 introduced
» 10th Patent awarded
» AMD licenses Z-RAM® Gen2
» ISi opens US office
2005
» ISi opens Japan office
» Z-RAM® technology launched
» Closed B round of financing
» First 65 nm memory designs
» Proved Z-RAM® concept for
FinFET
2004
» First 90nm megabit
memory designs
2003
» Closed first round of financing
2002
» Innovative Silicon (ISi)
legal entity created
2001
» Presented new memory
concept at SOI conference
» Dr. Fazan and Dr. Okhonin, EPFL
Switzerland, create concept of
Z-RAM
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